sep.1998 dimensions inches millimeters a 4.21 107.0 b 3.66 0.01 93.0 0.25 c 2.44 62.0 d 1.89 0.01 48.0 0.25 e 0.53 13.5 f 0.49 12.55 g 0.39 10.0 dimensions inches millimeters h 1.02 26.0 j 0.37 9.5 k 1.14 29.0 l 0.81 20.5 m 0.26 dia. 6.5 dia. n 1.34 +0.04/-0.02 34 +1.0/-0.5 p 1.02 +0.04/-0.02 26 +1.0/-0.5 description: mitsubishi igbt modules are de- signed for use in switching applica- tions. each module consists of one igbt in a single configuration with a reverse-connected super-fast re- covery free-wheel diode. all com- ponents and interconnects are iso- lated from the heat sinking base- plate, offering simplified system assembly and thermal manage- ment. features: u low drive power u low v ce(sat) u discrete super-fast recovery free-wheel diode u high frequency operation u isolated baseplate for easy heat sinking applications: u ac motor control u motion/servo control u ups u welding power supplies ordering information: example: select the complete module number you desire from the table - i.e. CM600HU-12H is a 600v (v ces ), 600 ampere single igbt module. current rating v ces type amperes volts (x 50) cm 600 12 outline drawing and circuit diagram mitsubishi igbt modules CM600HU-12H high power switching use insulated type cm e e g c a h e f m (4 - mounting holes) k d 2 - m4 nuts 2 - m8 nuts t c measured point j g c l b p n e e g c
sep.1998 absolute maximum ratings, t j = 25 c unless otherwise specified ratings symbol CM600HU-12H units junction temperature t j -40 to 150 c storage temperature t stg -40 to 125 c collector-emitter voltage (g-e short) v ces 600 volts gate-emitter voltage (c-e short) v ges 20 volts collector current (t c = 25 c) i c 600 amperes peak collector current (t j 150 c) i cm 1200* amperes emitter current** (t c = 25 c) i e 600 amperes peak emitter current** i em 1200* amperes maximum collector dissipation (t c = 25 c) p c 1560 watts mounting torque, m8 main terminal C 8.8~10.8 n m mounting torque, m6 mounting C 3.5~4.5 n m mounting torque, m4 terminal C 1.3~1.7 n m weight C 450 grams isolation voltage (main terminal to baseplate, ac 1 min.) v iso 2500 vrms * pulse width and repetition rate should be such that the device junction temperature (t j ) does not exceed t j(max) rating. **represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi). static electrical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units collector-cutoff current i ces v ce = v ces , v ge = 0v C C 1 ma gate leakage voltage i ges v ge = v ges , v ce = 0v C C 0.5 m a gate-emitter threshold voltage v ge(th) i c = 60ma, v ce = 10v 4.5 6 7.5 volts collector-emitter saturation voltage v ce(sat) i c = 600a, v ge = 15v, t j = 25 c C 2.4 3.0 volts i c = 600a, v ge = 15v, t j = 125 c C 2.6 C volts total gate charge q g v cc = 300v, i c = 600a, v ge = 15v C 1200 C nc emitter-collector voltage* v ec i e = 600a, v ge = 0v C C 2.6 volts * pulse width and repetition rate should be such that the device junction temperature (t j ) does not exceed t j(max) rating. dynamic electrical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units input capacitance c ies C C 52.8 nf output capacitance c oes v ce = 10v, v ge = 0v C C 28.8 nf reverse transfer capacitance c res C C 7.8 nf resistive turn-on delay time t d(on) v cc = 300v, i c = 600a, C C 300 ns load rise time t r v ge1 = v ge2 = 15v, C C 600 ns switch turn-off delay time t d(off) r g = 1.0 w , resistive C C 350 ns times fall time t f load switching operation C C 300 ns diode reverse recovery time t rr i e = 600a, di e /dt = -1200a/ m s C C 160 ns diode reverse recovery charge q rr i e = 600a, di e /dt = -1200a/ m s C 1.44 C m c thermal and mechanical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units thermal resistance, junction to case r th(j-c) q per igbt module C C 0.08 c/ w thermal resistance, junction to case r th(j-c) d per fwdi module C C 0.12 c/w contact thermal resistance r th(c-f) per module, thermal grease applied C 0.02 C c/w mitsubishi igbt modules CM600HU-12H high power switching use insulated type
sep.1998 mitsubishi igbt modules CM600HU-12H high power switching use insulated type gate charge, q g , (nc) gate-emitter voltage, v ge , (volts) gate charge, v ge 20 0 400 800 16 12 8 4 0 1200 1600 v cc = 300v v cc = 200v i c = 600a emitter current, i e , (amperes) reverse recovery time, t rr , (ns) reverse recovery characteristics (typical) 10 3 10 1 10 2 10 3 10 2 10 1 di/dt = -1200a/ m sec t j = 25? 10 2 10 1 10 0 reverse recovery current, i rr , (amperes) i rr t rr collector-emitter voltage, v ce , (volts) capacitance, c ies , c oes , c res , (nf) capacitance vs. v ce (typical) 10 -1 10 0 10 2 10 2 10 1 10 0 10 -1 v ge = 0v 10 1 c ies c oes c res 0.6 1.0 1.4 1.8 2.6 2.2 3.0 10 1 10 3 10 2 emitter-collector voltage, v ec , (volts) free-wheel diode forward characteristics (typical) 10 4 emitter current, i e , (amperes) t j = 25? gate-emitter voltage, v ge , (volts) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (typical) 10 0 4 8 12 16 20 8 6 4 2 0 t j = 25? i c = 240a i c = 1200a i c = 600a collector-current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts ) collector-emitter saturation voltage characteristics (typical) 5 0 240 480 720 960 4 3 2 1 0 1200 v ge = 15v t j = 25? t j = 125? gate-emitter voltage, v ge , (volts) collector current, i c , (amperes) transfer characteristics (typical) 0 4 8 12 16 20 960 720 480 240 0 1200 v ce = 10v t j = 25? t j = 125? collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) output characteristics (typical) 0246810 720 240 0 v ge = 20v 15 13 12 11 8 t j = 25 o c 480 960 1200 10 9 14 collector current, i c , (amperes) 10 1 10 2 10 3 10 3 10 2 10 1 t d(off) t d(on) t r v cc = 300v v ge = ?5v r g = 1.0 w t j = 125? t f switching time, (ns) half-bridge switching characteristics (typical)
sep.1998 mitsubishi igbt modules CM600HU-12H high power switching use insulated type time, (s) normalized transient thermal impedance, z th(j-c) transient thermal impedance characteristics (igbt) 10 1 10 -5 10 -4 10 -3 10 0 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 single pulse t c = 25 c per unit base = r th(j-c) = 0.08 c/w z th = r th ?(normalized value) 10 -1 10 -2 10 -3 time, (s) normalized transient thermal impedance, z th(j-c) transient thermal impedance characteristics (fwdi) 10 1 10 -5 10 -4 10 -3 10 0 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 10 -1 10 -2 10 -3 single pulse t c = 25 c per unit base = r th(j-c) = 0.12 c/w z th = r th ?(normalized value)
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